AMORPHOUS SILICON TANDEM SOLAR MODULE

Double p-i-n junction α-Si layer is deposited on the TCO coated 49”x25” float glass substrate in a batch type PECVD system using the box-carrier concept. The thickness and the band gap structure of the diodes are tuned for enhanced conversion of the incident light for optimum efficiency. The back side contact of ZnO:Al, Al layer is formed by conveyor type sputtering process. The monolith integration of the individual cells is provided by three laser scribing steps of TCO, absorber and back contact layers. The modules are laminated with an encapsulating foil and a second glass plate.

Structure of the α-Si tandem solar module

 

 

Product information
Size (mm)	1245x635x7
Weight (kg)	13.5
Area:  total/active (m2)	0.79/0.75
Stabilized Power (W)	43(±10%)
Stabilized efficiency (%)	6
Voltage at Pmax (V)	45,2 (±10%)
Current at Pmax (A)	0,95 (±10%)
Open Circuit Voltage Voc (V)	62,5 (±10%)
Short Circuit Current Isc (A)	1,24 (±10%)
Maximum System Voltage (V)	1000